Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
ES1GL R2G Технические параметры
Taiwan Semiconductor ES1GL R2G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - RF | |
| Марка | Taiwan Semiconductor | |
| Surface Mount | YES | |
| Diode Element Material | SILICON | |
| Number of Terminals | 2Terminals | |
| ECCN (US) | EAR99 | |
| Maximum DC Reverse Voltage (V) | 400 | |
| Peak Reverse Repetitive Voltage (V) | 400 | |
| Maximum Continuous Forward Current (A) | 1 | |
| Peak Non-Repetitive Surge Current (A) | 30 | |
| Peak Forward Voltage (V) | 1.3 | |
| Peak Reverse Current (uA) | 5 | |
| Peak Reverse Recovery Time (ns) | 35 | |
| Minimum Operating Temperature (°C) | -55 | |
| Maximum Operating Temperature (°C) | 150 | |
| Automotive | No | |
| Standard Package Name | DO-219-AA | |
| Supplier Package | Sub SMA | |
| Military | No | |
| Mounting | Surface Mount | |
| Package Height | 1.33(Max) | |
| Package Length | 2.9(Max) | |
| Package Width | 1.9(Max) | |
| PCB changed | 2 | |
| Lead Shape | Flat | |
| Peak Rep Rev Volt | 400(V) | |
| Peak Forward Voltage | 1.3(V) | |
| Operating Temperature Classification | Military | |
| Package Type | Sub SMA | |
| Peak Reverse Recovery Time | 35(ns) | |
| Maximum Forward Current | 1000(mA) | |
| Operating Temp Range | -55C to 150C | |
| Rad Hardened | No | |
| Rectifier Type | Switching Diode | |
| Package Description | R-PDSO-F2 | |
| Package Style | SMALL OUTLINE |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Operating Temperature-Min | -55 °C | |
| Reflow Temperature-Max (s) | 30 | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | ES1GLR2G | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Taiwan Semiconductor Manufacturing Company Limited | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TAIWAN SEMICONDUCTOR CO LTD | |
| Risk Rank | 5 | |
| Packaging | Tape and Reel | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| ECCN Code | EAR99 | |
| Type | Switching Diode | |
| Terminal Finish | Matte Tin (Sn) | |
| Additional Feature | LOW POWER LOSS | |
| HTS Code | 8541.10.00.80 | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| Pin Count | 2 | |
| JESD-30 Code | R-PDSO-F2 | |
| Configuration | Single | |
| Diode Type | RECTIFIER DIODE | |
| Output Current-Max | 1 A | |
| Peak Reverse Current | 5(uA) | |
| Rep Pk Reverse Voltage-Max | 400 V | |
| Peak Non-Repetitive Surge Current | 30(A) | |
| Reverse Recovery Time-Max | 0.035 µs | |
| RoHS Status | Yes with exemptions |
ES1GL R2G Документы
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ