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GBU801 D2 Технические параметры

Taiwan Semiconductor  GBU801 D2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка Taiwan Semiconductor
Surface Mount NO
Diode Element Material SILICON
Number of Terminals 4Terminals
ECCN (US) EAR99
Bridge Type Single Phase
Peak Reverse Repetitive Voltage (V) 50
Peak Average Forward Current (A) 8
Peak RMS Reverse Voltage (V) 35
Peak Non-Repetitive Forward Surge Current (A) 200
Peak Forward Voltage (V) 1.1
Peak Reverse Current (uA) 5
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Standard Package Name Case GBU
Supplier Package Case GBU
Military No
Mounting Through Hole
Package Height 18.8(Max)
Package Length 22.3(Max)
Package Width 3.56(Max)
PCB changed 4
Package Description R-PSFM-T4
Package Style FLANGE MOUNT
Package Body Material PLASTIC/EPOXY
Operating Temperature-Min -55 °C
Свойство продукта Значение свойства
Operating Temperature-Max 150 °C
Rohs Code Yes
Manufacturer Part Number GBU801D2
Package Shape RECTANGULAR
Manufacturer Taiwan Semiconductor Manufacturing Company Limited
Number of Elements 4 Elements
Part Life Cycle Code Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD
Risk Rank 5.12
Packaging Tube
Part Status Active
ECCN Code EAR99
Additional Feature UL RECOGNIZED
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Reach Compliance Code compliant
Pin Count 4
JESD-30 Code R-PSFM-T4
Configuration Single
Diode Type BRIDGE RECTIFIER DIODE
Case Connection ISOLATED
Output Current-Max 8 A
Number of Phases 1Phase
Rep Pk Reverse Voltage-Max 50 V
Non-rep Pk Forward Current-Max 200 A
Breakdown Voltage-Min 50 V
RoHS Status Yes with exemptions

GBU801 D2 Документы

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