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GBU807HC2G Технические параметры

Taiwan Semiconductor  GBU807HC2G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка Taiwan Semiconductor
Surface Mount NO
Diode Element Material SILICON
Number of Terminals 4Terminals
Bridge Type Single Phase
Peak Reverse Repetitive Voltage (V) 1000
Peak Average Forward Current (A) 8
Peak RMS Reverse Voltage (V) 700
Peak Non-Repetitive Forward Surge Current (A) 200
Peak Forward Voltage (V) 1.1
Peak Reverse Current (uA) 5
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Supplier Temperature Grade Automotive
AEC Qualified Number AEC-Q101
Supplier Package Case GBU
Military No
Mounting Through Hole
Package Height 18.8(Max)
Package Length 22.3(Max)
Package Width 3.56(Max)
PCB changed 4
Package Description R-PSFM-T4
Package Style FLANGE MOUNT
Moisture Sensitivity Levels 1
Package Body Material PLASTIC/EPOXY
Operating Temperature-Min -55 °C
Reflow Temperature-Max (s) NOT SPECIFIED
Operating Temperature-Max 150 °C
Свойство продукта Значение свойства
Rohs Code Yes
Manufacturer Part Number GBU807HC2G
Package Shape RECTANGULAR
Manufacturer Taiwan Semiconductor
Number of Elements 4 Elements
Part Life Cycle Code Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD
Risk Rank 5.63
Packaging Tube
JESD-609 Code e3
Part Status Active
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature UL RECOGNIZED
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Pin Count 4
Reference Standard AEC-Q101
JESD-30 Code R-PSFM-T4
Configuration Single
Diode Type BRIDGE RECTIFIER DIODE
Case Connection ISOLATED
Output Current-Max 8 A
Number of Phases 1Phase
Rep Pk Reverse Voltage-Max 1000 V
Non-rep Pk Forward Current-Max 200 A
Breakdown Voltage-Min 1000 V
RoHS Status Yes with exemptions

GBU807HC2G Документы

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