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HDBL106G Технические параметры
Taiwan Semiconductor HDBL106G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Bridge Rectifiers | |
| Марка | Taiwan Semiconductor | |
| Lifecycle Status | Production (Last Updated: 2 years ago) | |
| Package / Case | DBL-4 | |
| Mounting Type | Through Hole | |
| Surface Mount | NO | |
| Supplier Device Package | DBL | |
| Diode Element Material | SILICON | |
| Number of Terminals | 4Terminals | |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 years ago) | |
| RoHS | Compliant | |
| Manufacturer | TAIWAN SEMICONDUCTOR | |
| Unit Weight | 1.269863 oz | |
| Factory Pack QuantityFactory Pack Quantity | 5000 | |
| Brand | Taiwan Semiconductor | |
| Package | Tube | |
| Base Product Number | HDBL106 | |
| Mfr | Taiwan Semiconductor Corporation | |
| Product Status | Active | |
| Package Description | R-PDIP-T4 | |
| Package Style | IN-LINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Operating Temperature-Min | -55 °C | |
| Operating Temperature-Max | 150 °C | |
| Manufacturer Part Number | HDBL106G | |
| Package Shape | RECTANGULAR | |
| Number of Elements | 4 Elements | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TAIWAN SEMICONDUCTOR CO LTD | |
| Risk Rank | 5.73 | |
| Packaging | DBL | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Series | Automotive, AEC-Q101 | |
| JESD-609 Code | e3 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| ECCN Code | EAR99 | |
| Terminal Finish | PURE TIN | |
| Additional Feature | UL RECOGNIZED | |
| HTS Code | 8541.10.00.80 | |
| Capacitance | IR - 5uA | |
| Subcategory | Diodes & Rectifiers | |
| Technology | Standard | |
| Terminal Position | DUAL | |
| Terminal Form | THROUGH-HOLE | |
| Reach Compliance Code | compliant | |
| Pin Count | 4 | |
| JESD-30 Code | R-PDIP-T4 | |
| Qualification Status | Not Qualified | |
| Configuration | BRIDGE, 4 ELEMENTS | |
| Voltage | VRRM - 800V | |
| Diode Type | Single Phase | |
| Current - Reverse Leakage @ Vr | 5 µA @ 800 V | |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 1 A | |
| Max Reverse Leakage Current | 5 µA | |
| Output Current-Max | 1 A | |
| Current - Average Rectified (Io) | 1 A | |
| Forward Voltage | 1.7 V | |
| Product Type | Bridge Rectifiers | |
| Number of Phases | 1Phase | |
| Reverse Recovery Time | 75 ns | |
| Max Repetitive Reverse Voltage (Vrrm) | 800 V | |
| Rep Pk Reverse Voltage-Max | 800 V | |
| Non-rep Pk Forward Current-Max | 50 A | |
| Max Forward Surge Current (Ifsm) | 50 A | |
| Voltage - Peak Reverse (Max) | 800 V | |
| Max Junction Temperature (Tj) | 150 °C | |
| Breakdown Voltage-Min | 800 V | |
| Product Category | Bridge Rectifiers |
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