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Taiwan Semiconductor HER303G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Single | |
| Марка | Taiwan Semiconductor | |
| Lifecycle Status | Production (Last Updated: 2 years ago) | |
| Mounting Type | Through Hole | |
| Package / Case | DO-201AD, Axial | |
| Supplier Device Package | DO-201AD | |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 years ago) | |
| RoHS | Non-Compliant | |
| Package | Tape & Reel (TR) | |
| Mfr | Taiwan Semiconductor Corporation | |
| Product Status | Active | |
| Series | - | |
| Max Operating Temperature | 150 °C | |
| Min Operating Temperature | -65 °C | |
| Element Configuration | Single | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Diode Type | Standard | |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Power Dissipation | 400 mW | |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 3 A | |
| Max Reverse Leakage Current | 10 µA | |
| Operating Temperature - Junction | -55°C ~ 150°C | |
| Max Surge Current | 125 A | |
| Voltage - DC Reverse (Vr) (Max) | 200 V | |
| Current - Average Rectified (Io) | 3A | |
| Forward Voltage | 1 V | |
| Reverse Recovery Time | 50 ns | |
| Peak Reverse Current | 10 µA | |
| Max Repetitive Reverse Voltage (Vrrm) | 200 V | |
| Capacitance @ Vr, F | 60pF @ 4V, 1MHz | |
| Reverse Voltage | 200 V | |
| Max Forward Surge Current (Ifsm) | 125 A | |
| Recovery Time | 50 ns | |
| Max Junction Temperature (Tj) | 150 °C | |
| Reverse Recovery Time (trr) | 50 ns |