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LS4448 L1G Технические параметры

Taiwan Semiconductor  LS4448 L1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка Taiwan Semiconductor
Surface Mount YES
Diode Element Material SILICON
Number of Terminals 2Terminals
Peak Reverse Repetitive Voltage (V) 75
Maximum Continuous Forward Current (A) 0.45
Peak Non-Repetitive Surge Current (A) 2
Peak Forward Voltage (V) [email protected]
Peak Reverse Current (uA) 5
Maximum Power Dissipation (mW) 500
Peak Reverse Recovery Time (ns) 4
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 175
Supplier Package Quadro Mini-MELF
Military No
Mounting Surface Mount
Package Height 1.8
Package Length 3.7(Max)
Package Width 1.6(Max)
PCB changed 2
Package Description O-LELF-R2
Package Style LONG FORM
Package Body Material GLASS
Operating Temperature-Min -65 °C
Operating Temperature-Max 175 °C
Свойство продукта Значение свойства
Manufacturer Part Number LS4448L1G
Power Dissipation (Max) 0.5 W
Package Shape ROUND
Manufacturer Taiwan Semiconductor Manufacturing Company Limited
Number of Elements 1 Element
Part Life Cycle Code Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD
Risk Rank 5.38
Packaging Tape and Reel
Part Status NRND
ECCN Code EAR99
Type Small Signal Switching Diode
Terminal Position END
Terminal Form WRAP AROUND
Reach Compliance Code unknown
Pin Count 2
JESD-30 Code O-LELF-R2
Configuration Single
Diode Type RECTIFIER DIODE
Case Connection ISOLATED
Output Current-Max 0.15 A
Rep Pk Reverse Voltage-Max 75 V
JEDEC-95 Code DO-213
Reverse Recovery Time-Max 0.004 µs
RoHS Status Yes with exemptions

LS4448 L1G Документы

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