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Taiwan Semiconductor MBR3035CT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Fixed Inductors | |
| Марка | Taiwan Semiconductor | |
| Lifecycle Status | Production (Last Updated: 2 years ago) | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Number of Pins | 3Pins | |
| Supplier Device Package | TO-220AB | |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 years ago) | |
| RoHS | Compliant | |
| Package | Tube | |
| Mfr | Taiwan Semiconductor Corporation | |
| Product Status | Active | |
| Current - Average Rectified (Io) (per Diode) | 30A (DC) | |
| Series | - | |
| Max Operating Temperature | 150 °C | |
| Min Operating Temperature | -65 °C | |
| Element Configuration | Common Cathode | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Diode Type | Schottky | |
| Current - Reverse Leakage @ Vr | 200 µA @ 35 V | |
| Power Dissipation | 400 mW | |
| Voltage - Forward (Vf) (Max) @ If | 820 mV @ 30 A | |
| Forward Current | 30 A | |
| Max Reverse Leakage Current | 200 µA | |
| Operating Temperature - Junction | -55°C ~ 150°C | |
| Max Surge Current | 200 A | |
| Voltage - DC Reverse (Vr) (Max) | 35 V | |
| Forward Voltage | 700 mV | |
| Reverse Recovery Time | 25 ns | |
| Peak Reverse Current | 200 µA | |
| Max Repetitive Reverse Voltage (Vrrm) | 35 V | |
| Diode Configuration | 1 Pair Common Cathode | |
| Max Forward Surge Current (Ifsm) | 200 A | |
| Max Junction Temperature (Tj) | 150 °C | |
| Width | 4.7 mm | |
| Height | 8.24 mm | |
| Length | 10.5 mm |