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MBRS30H45CT RN Технические параметры

Taiwan Semiconductor  MBRS30H45CT RN technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка Taiwan Semiconductor
Surface Mount YES
Diode Element Material SILICON
Number of Terminals 2Terminals
ECCN (US) EAR99
Peak Reverse Repetitive Voltage (V) 45
Maximum Continuous Forward Current (A) 30
Peak Non-Repetitive Surge Current (A) 220
Peak Forward Voltage (V) 0.9
Peak Reverse Current (uA) 200
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 175
Standard Package Name TO-263
Supplier Package D2PAK
Military No
Mounting Surface Mount
Package Height 4.7(Max)
Package Length 10.5(Max)
Package Width 9.25(Max)
PCB changed 2
Tab Tab
Lead Shape Gull-wing
Package Description R-PSSO-G2
Package Style SMALL OUTLINE
Package Body Material PLASTIC/EPOXY
Operating Temperature-Min -55 °C
Operating Temperature-Max 175 °C
Rohs Code Yes
Manufacturer Part Number MBRS30H45CTRN
Package Shape RECTANGULAR
Свойство продукта Значение свойства
Manufacturer Taiwan Semiconductor
Number of Elements 2 Elements
Part Life Cycle Code Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD
Forward Voltage-Max (VF) 0.9 V
Risk Rank 5.31
Packaging Tape and Reel
Part Status Active
ECCN Code EAR99
Type Schottky Diode
Applications EFFICIENCY
Additional Feature LOW POWER LOSS
HTS Code 8541.10.00.80
Subcategory Rectifier Diodes
Technology SCHOTTKY
Terminal Position SINGLE
Terminal Form GULL WING
Reach Compliance Code compliant
Pin Count 3
JESD-30 Code R-PSSO-G2
Configuration Dual Common Cathode
Diode Type RECTIFIER DIODE
Case Connection CATHODE
Output Current-Max 15 A
Number of Phases 1Phase
Rep Pk Reverse Voltage-Max 45 V
JEDEC-95 Code TO-263AB
Non-rep Pk Forward Current-Max 220 A
Reverse Current-Max 200 µA
RoHS Status Yes with exemptions

MBRS30H45CT RN Документы

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