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SS12L R3 Технические параметры

Taiwan Semiconductor  SS12L R3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка Taiwan Semiconductor
Lifecycle Status Production (Last Updated: 2 years ago)
Mounting Type Surface Mount
Mount Surface Mount
Number of Pins 2Pins
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 20
Peak Reverse Repetitive Voltage (V) 20
Maximum Continuous Forward Current (A) 1
Peak Non-Repetitive Surge Current (A) 30
Peak Forward Voltage (V) 0.45
Peak Reverse Current (uA) 400
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 125
Standard Package Name DO-219-AA
Supplier Package Sub SMA
Military No
Mounting Surface Mount
Package Height 1.33(Max)
Package Length 2.9(Max)
Package Width 1.9(Max)
PCB changed 2
Lead Shape Flat
Number of Elements per Chip 1
Package Type Sub SMA
Свойство продукта Значение свойства
Rectifier Type Schottky Rectifier
Qualification -
RoHS Compliant
Manufacturer Lifecycle Status ACTIVE (Last Updated: 2 years ago)
Packaging Tape and Reel
Part Status Active
Type Schottky Diode
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Pin Count 2
Configuration Single
Element Configuration Single
Diode Type Schottky
Forward Current 1 A
Forward Voltage 450 mV
Peak Reverse Current 8 mA
Max Repetitive Reverse Voltage (Vrrm) 20 V
Peak Non-Repetitive Surge Current 30 A
Diode Configuration Single
Max Forward Surge Current (Ifsm) 30 A
Repetitive Peak Reverse Voltage 20V
Length 2.9 mm
Height 1.43 mm
Width 1.9 mm
RoHS Status Yes with exemptions

SS12L R3 Документы

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