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TSI10H100CW Технические параметры
Taiwan Semiconductor TSI10H100CW technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Arrays | |
| Марка | Taiwan Semiconductor | |
| Lifecycle Status | Production (Last Updated: 1 week ago) | |
| Mount | Axial, Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| Supplier Device Package | I2PAK | |
| Weight | 400.011771 mg | |
| Voltage, Rating | 350 V | |
| RoHS | Compliant | |
| Package | Tube | |
| Base Product Number | TSI10 | |
| Mfr | Taiwan Semiconductor Corporation | |
| Product Status | Obsolete | |
| Current - Average Rectified (Io) (per Diode) | 5A | |
| Packaging | Bulk | |
| Series | - | |
| Tolerance | 0.1 % | |
| Number of Terminations | 2Terminations | |
| Termination | Axial |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Temperature Coefficient | 25 ppm/°C | |
| Resistance | 681 Ω | |
| Max Operating Temperature | 155 °C | |
| Min Operating Temperature | -55 °C | |
| Composition | Metal Film, Thin Film | |
| Power Rating | 500 mW | |
| Max Power Dissipation | 500 mW | |
| ELV | Compliant | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Diode Type | Schottky | |
| Current - Reverse Leakage @ Vr | 100 µA @ 100 V | |
| Voltage - Forward (Vf) (Max) @ If | 690 mV @ 5 A | |
| Number of Resistors | 1Resistor | |
| Lead/Base Style | Axial | |
| Operating Temperature - Junction | -55°C ~ 150°C | |
| Voltage - DC Reverse (Vr) (Max) | 100 V | |
| Diode Configuration | 1 Pair Common Cathode | |
| Length | 10 mm | |
| Diameter | 3.7 mm |
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