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TSM60N900CH Технические параметры

Taiwan Semiconductor  TSM60N900CH technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка Taiwan Semiconductor
Package / Case TO-251-3
Package Case
Mfr AUTEC POWER SYSTEMS
Product Status Active
Voltage-Input 100 ~ 240 VAC
Manufacturer TAIWAN SEMICONDUCTOR
Vds - Drain-Source Breakdown Voltage 600 V
Typical Turn-On Delay Time 12 ns
Vgs th - Gate-Source Threshold Voltage 2 V
Pd - Power Dissipation 50 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 150 C
Vgs - Gate-Source Voltage - 30 V, + 30 V
Unit Weight 0.011993 oz
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 1875
Mounting Styles Through Hole
Channel Mode Enhancement
Part # Aliases TSM60N900CH C5G
Brand Taiwan Semiconductor
Qg - Gate Charge 9.7 nC
Свойство продукта Значение свойства
Rds On - Drain-Source Resistance 720 mOhms
RoHS Details
Typical Turn-Off Delay Time 22 ns
Id - Continuous Drain Current 4.5 A
Series DT036A (36W)
Packaging TO-251 (I-PAK)
Applications ITE (Commercial)
Power (Watts) 36 W
Capacitance Ciss - 480pF
Subcategory MOSFETs
Technology Si
Efficiency Level VI
Configuration Single
Number of Channels 1 ChannelChannel
Voltage VDS - 600V
Current - Output (Max) 2.66A
Voltage - Output 13.5V
Rise Time 16 ns
Product Type MOSFET
Transistor Type 1 N-Channel
Form Desktop
Output Connector Barrel Plug, 2.5mm I.D. x 5.5mm O.D.
Product Category MOSFET
Просмотр сходства
TSM60N900CH brand manufacturers: Taiwan Semiconductor, Anli stock, TSM60N900CH reference price.Taiwan Semiconductor. TSM60N900CH parameters, TSM60N900CH Datasheet PDF and pin diagram description download.You can use the TSM60N900CH Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find TSM60N900CH pin diagram and circuit diagram and usage method of function,TSM60N900CH electronics tutorials.You can download from the Anli.