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TSM60N900CP Технические параметры

Taiwan Semiconductor  TSM60N900CP technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка Taiwan Semiconductor
Package / Case TO-252-3
Package Bulk
Base Product Number KJ6T1
Mfr ITT Cannon, LLC
Product Status Active
Manufacturer TAIWAN SEMICONDUCTOR
Vds - Drain-Source Breakdown Voltage 600 V
Typical Turn-On Delay Time 12 ns
Vgs th - Gate-Source Threshold Voltage 2 V
Pd - Power Dissipation 50 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 150 C
Vgs - Gate-Source Voltage - 30 V, + 30 V
Unit Weight 0.011640 oz
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 2500
Mounting Styles SMD/SMT
Channel Mode Enhancement
Свойство продукта Значение свойства
Part # Aliases TSM60N900CP R0G
Brand Taiwan Semiconductor
Qg - Gate Charge 9.7 nC
Rds On - Drain-Source Resistance 720 mOhms
RoHS Details
Typical Turn-Off Delay Time 22 ns
Id - Continuous Drain Current 4.5 A
Series *
Packaging TO-252 (D-PAK)
Capacitance Ciss - 480pF
Subcategory MOSFETs
Technology Si
Configuration Single
Number of Channels 1 ChannelChannel
Voltage VDS - 600V
Rise Time 16 ns
Product Type MOSFET
Transistor Type 1 N-Channel
Product Category MOSFET
Просмотр сходства
TSM60N900CP brand manufacturers: Taiwan Semiconductor, Anli stock, TSM60N900CP reference price.Taiwan Semiconductor. TSM60N900CP parameters, TSM60N900CP Datasheet PDF and pin diagram description download.You can use the TSM60N900CP Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find TSM60N900CP pin diagram and circuit diagram and usage method of function,TSM60N900CP electronics tutorials.You can download from the Anli.