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TS13002ACT A3G Технические параметры

Taiwan Semiconductor Corporation  TS13002ACT A3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Factory Lead Time 32 Weeks
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92
Current-Collector (Ic) (Max) 300mA
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Part Status Active
Свойство продукта Значение свойства
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 600mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 100mA 10V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 20mA, 200mA
Voltage - Collector Emitter Breakdown (Max) 400V
Frequency - Transition 4MHz
RoHS Status ROHS3 Compliant

TS13002ACT A3G Документы

TS13002ACT A3G brand manufacturers: Taiwan Semiconductor Corporation, Anli stock, TS13002ACT A3G reference price.Taiwan Semiconductor Corporation. TS13002ACT A3G parameters, TS13002ACT A3G Datasheet PDF and pin diagram description download.You can use the TS13002ACT A3G Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find TS13002ACT A3G pin diagram and circuit diagram and usage method of function,TS13002ACT A3G electronics tutorials.You can download from the Anli.