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TSC5303DCHC5G Технические параметры

Taiwan Semiconductor Corporation  TSC5303DCHC5G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3Pins
Supplier Device Package TO-251 (IPAK)
Current-Collector (Ic) (Max) 3A
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Max Power Dissipation 30W
Element Configuration Single
Свойство продукта Значение свойства
Power - Max 30W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 700V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 1A 5V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 700mV @ 100mA, 400mA
Voltage - Collector Emitter Breakdown (Max) 400V
Collector Base Voltage (VCBO) 700V
Emitter Base Voltage (VEBO) 9V
Height 7mm
Length 6.5mm
Width 2.3mm
RoHS Status ROHS3 Compliant

TSC5303DCHC5G Документы

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