[email protected]

Локаль

Язык

  • English
  • русский

Валюта

  • CNY-¥
  • RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]

TSM056NH04LCR RLG Технические параметры

Taiwan Semiconductor Corporation  TSM056NH04LCR RLG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Package / Case 8-PowerTDFN
Mounting Type Surface Mount
Supplier Device Package 8-PDFNU (5x6)
Power Dissipation (Max) 78.9W (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25℃ 18A (Ta), 54A (Tc)
Product Status Active
Mfr Taiwan Semiconductor Corporation
Vds - Drain-Source Breakdown Voltage 40 V
Typical Turn-On Delay Time 8.2 ns
Vgs th - Gate-Source Threshold Voltage 2.2 V
Pd - Power Dissipation 78.9 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Voltage - 16 V, + 16 V
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 2500
Mounting Styles SMD/SMT
Forward Transconductance - Min 117.5 S
Channel Mode Enhancement
Part # Aliases TSM056NH04LCR
Manufacturer Taiwan Semiconductor
Свойство продукта Значение свойства
Brand Taiwan Semiconductor
Qg - Gate Charge 14.2 nC
Tradename PerFET
Rds On - Drain-Source Resistance 5.6 mOhms
RoHS Details
Typical Turn-Off Delay Time 24.6 ns
Id - Continuous Drain Current 54 A
Operating Temperature -55°C ~ 175°C (TJ)
Packaging MouseReel
Subcategory MOSFETs
Number of Channels 1 ChannelChannel
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.6mOhm @ 27A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1940 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 30.4 nC @ 10 V
Rise Time 54.3 ns
Drain to Source Voltage (Vdss) 40 V
Vgs (Max) ±16V
Product Type MOSFET
Transistor Type 1 N-Channel
FET Feature -
Product Category MOSFET
Просмотр сходства
TSM056NH04LCR RLG brand manufacturers: Taiwan Semiconductor Corporation, Anli stock, TSM056NH04LCR RLG reference price.Taiwan Semiconductor Corporation. TSM056NH04LCR RLG parameters, TSM056NH04LCR RLG Datasheet PDF and pin diagram description download.You can use the TSM056NH04LCR RLG Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find TSM056NH04LCR RLG pin diagram and circuit diagram and usage method of function,TSM056NH04LCR RLG electronics tutorials.You can download from the Anli.