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TSM056NH04LCV RGG Технические параметры

Taiwan Semiconductor Corporation  TSM056NH04LCV RGG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Supplier Device Package 8-PDFN (3.1x3.1)
Mfr Taiwan Semiconductor Corporation
Product Status Active
Current - Continuous Drain (Id) @ 25℃ 16A (Ta), 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Power Dissipation (Max) 34W (Tc)
Vds - Drain-Source Breakdown Voltage 40 V
Typical Turn-On Delay Time 8.9 ns
Vgs th - Gate-Source Threshold Voltage 2.2 V
Pd - Power Dissipation 34 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 150 C
Vgs - Gate-Source Voltage - 16 V, + 16 V
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 5000
Mounting Styles SMD/SMT
Forward Transconductance - Min 57 S
Channel Mode Enhancement
Part # Aliases TSM056NH04LCV
Свойство продукта Значение свойства
Manufacturer Taiwan Semiconductor
Brand Taiwan Semiconductor
Qg - Gate Charge 16 nC
Tradename PerFET
RoHS Details
Typical Turn-Off Delay Time 28 ns
Id - Continuous Drain Current 54 A
Operating Temperature -55°C ~ 150°C (TJ)
Packaging MouseReel
Subcategory MOSFETs
Number of Channels 1 ChannelChannel
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.6mOhm @ 27A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2076 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
Rise Time 48 ns
Drain to Source Voltage (Vdss) 40 V
Vgs (Max) ±16V
Product Type MOSFET
FET Feature -
Product Category MOSFET
Просмотр сходства
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