Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Taiwan Semiconductor Corporation TSM076NH04LDCR RLG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerTDFN | |
| Supplier Device Package | 8-PDFNU (5x6) | |
| Mfr | Taiwan Semiconductor Corporation | |
| Product Status | Active | |
| Current - Continuous Drain (Id) @ 25℃ | 14A (Ta), 34A (Tc) | |
| Vds - Drain-Source Breakdown Voltage | 40 V | |
| Typical Turn-On Delay Time | 7.3 ns | |
| Vgs th - Gate-Source Threshold Voltage | 2.2 V | |
| Pd - Power Dissipation | 55.6 W | |
| Transistor Polarity | N-Channel | |
| Maximum Operating Temperature | + 175 C | |
| Vgs - Gate-Source Voltage | - 16 V, + 16 V | |
| Minimum Operating Temperature | - 55 C | |
| Factory Pack QuantityFactory Pack Quantity | 2500 | |
| Mounting Styles | SMD/SMT | |
| Forward Transconductance - Min | 133.3 S | |
| Channel Mode | Enhancement | |
| Part # Aliases | TSM076NH04LDCR | |
| Manufacturer | Taiwan Semiconductor | |
| Brand | Taiwan Semiconductor |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Qg - Gate Charge | 10.7 nC | |
| Tradename | PerFET | |
| Rds On - Drain-Source Resistance | 7.6 mOhms | |
| RoHS | Details | |
| Typical Turn-Off Delay Time | 23.6 ns | |
| Id - Continuous Drain Current | 34 A | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Packaging | MouseReel | |
| Subcategory | MOSFETs | |
| Technology | Si | |
| Number of Channels | 2 ChannelChannel | |
| Power - Max | 55.6W (Tc) | |
| FET Type | 2 N-Channel (Dual) | |
| Rds On (Max) @ Id, Vgs | 7.6mOhm @ 17A, 10V | |
| Vgs(th) (Max) @ Id | 2.2V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1344pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 22.4nC @ 10V | |
| Rise Time | 50.1 ns | |
| Drain to Source Voltage (Vdss) | 40V | |
| Product Type | MOSFET | |
| Transistor Type | 2 N-Channel | |
| FET Feature | Standard | |
| Product Category | MOSFET |