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TSM60NB1R4CH C5G Технические параметры

Taiwan Semiconductor Corporation  TSM60NB1R4CH C5G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 36 Weeks
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount NO
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 3A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 28.4W Tc
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSIP-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.4 Ω @ 900mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 257.3pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 7.12nC @ 10V
Drain to Source Voltage (Vdss) 600V
Vgs (Max) ±30V
Drain Current-Max (Abs) (ID) 3A
Pulsed Drain Current-Max (IDM) 9A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 25 mJ
RoHS Status ROHS3 Compliant
Просмотр сходства
TSM60NB1R4CH C5G brand manufacturers: Taiwan Semiconductor Corporation, Anli stock, TSM60NB1R4CH C5G reference price.Taiwan Semiconductor Corporation. TSM60NB1R4CH C5G parameters, TSM60NB1R4CH C5G Datasheet PDF and pin diagram description download.You can use the TSM60NB1R4CH C5G Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find TSM60NB1R4CH C5G pin diagram and circuit diagram and usage method of function,TSM60NB1R4CH C5G electronics tutorials.You can download from the Anli.