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TSS4B03G D2G Технические параметры
Taiwan Semiconductor Corporation TSS4B03G D2G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Bridge Rectifiers | |
| Марка | ||
| Factory Lead Time | 10 Weeks | |
| Mounting Type | Through Hole | |
| Package / Case | 4-SIP, TS-4B | |
| Surface Mount | NO | |
| Diode Element Material | SILICON | |
| Number of Elements | 4 Elements | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Published | 2015 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations | |
| ECCN Code | EAR99 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Finish | Matte Tin (Sn) | |
| Additional Feature | UL RECOGNIZED | |
| JESD-30 Code | R-PSFM-T4 | |
| Configuration | BRIDGE, 4 ELEMENTS | |
| Diode Type | Single Phase | |
| Current - Reverse Leakage @ Vr | 5μA @ 200V | |
| Voltage - Forward (Vf) (Max) @ If | 980mV @ 4A | |
| Case Connection | ISOLATED | |
| Output Current-Max | 4A | |
| Current - Average Rectified (Io) | 4A | |
| Number of Phases | 1Phase | |
| Non-rep Pk Forward Current-Max | 150A | |
| Voltage - Peak Reverse (Max) | 200V | |
| Breakdown Voltage-Min | 200V | |
| RoHS Status | ROHS3 Compliant |
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