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US1J R3G Технические параметры
Taiwan Semiconductor Corporation US1J R3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Single | |
| Марка | ||
| Factory Lead Time | 20 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | DO-214AC, SMA | |
| Surface Mount | YES | |
| Diode Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Operating Temperature (Max.) | 150°C | |
| Packaging | Digi-Reel® | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.80 | |
| Terminal Position | DUAL |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Form | C BEND | |
| JESD-30 Code | R-PDSO-C2 | |
| Configuration | SINGLE | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Diode Type | Standard | |
| Current - Reverse Leakage @ Vr | 5μA @ 600V | |
| Voltage - Forward (Vf) (Max) @ If | 1.7V @ 1A | |
| Operating Temperature - Junction | -55°C~150°C | |
| Output Current-Max | 1A | |
| Voltage - DC Reverse (Vr) (Max) | 600V | |
| Current - Average Rectified (Io) | 1A | |
| Reverse Recovery Time | 75ns | |
| Rep Pk Reverse Voltage-Max | 600V | |
| Capacitance @ Vr, F | 10pF @ 4V 1MHz | |
| RoHS Status | ROHS3 Compliant |
US1J R3G Документы
- DatasheetsUS1A - US1M
- Environmental InformationTaiwan Semi RoHS3
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