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CSD13201W10 Технические параметры

Texas Instruments  CSD13201W10 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка Texas Instruments
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Factory Lead Time 6 Weeks
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-UFBGA, DSBGA
Number of Pins 4Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 1.6A Ta
Drive Voltage (Max Rds On, Min Rds On) 1.8V 4.5V
Number of Elements 1 Element
Power Dissipation (Max) 1.2W Ta
Turn Off Delay Time 14.4 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD13201
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.2W
Turn On Delay Time 3.9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 34m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 462pF @ 6V
Gate Charge (Qg) (Max) @ Vgs 2.9nC @ 4.5V
Rise Time 5.9ns
Vgs (Max) ±8V
Fall Time (Typ) 9.7 ns
Continuous Drain Current (ID) 1.6A
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.053Ohm
Drain to Source Breakdown Voltage 12V
Pulsed Drain Current-Max (IDM) 20.2A
Feedback Cap-Max (Crss) 22.6 pF
Height 625μm
Length 0m
Width 0m
Thickness 650μm
RoHS Status ROHS3 Compliant
Lead Free Lead Free

CSD13201W10 Документы

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