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CSD13202Q2 Технические параметры

Texas Instruments  CSD13202Q2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка Texas Instruments
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 8 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VDFN Exposed Pad
Number of Pins 6Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 22A Ta
Drive Voltage (Max Rds On, Min Rds On) 2.5V 4.5V
Number of Elements 1 Element
Power Dissipation (Max) 2.7W Ta
Turn Off Delay Time 11 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET™
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature AVALANCHE RATED
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD13302
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.7W
Case Connection DRAIN
Turn On Delay Time 4.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.3m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 997pF @ 6V
Gate Charge (Qg) (Max) @ Vgs 6.6nC @ 4.5V
Rise Time 28ns
Vgs (Max) ±8V
Fall Time (Typ) 13.6 ns
Continuous Drain Current (ID) 22A
Threshold Voltage 800mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 12V
Avalanche Energy Rating (Eas) 20 mJ
Length 2mm
Width 2mm
Thickness 750μm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

CSD13202Q2 Документы

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