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CSD16321Q5C Технические параметры

Texas Instruments  CSD16321Q5C technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка Texas Instruments
Lifecycle Status NRND (Last Updated: 4 weeks ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 31A Ta 100A Tc
Drive Voltage (Max Rds On, Min Rds On) 3V 8V
Number of Elements 1 Element
Power Dissipation (Max) 3.1W Ta
Turn Off Delay Time 27 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Base Part Number CSD16321
Pin Count 8
Element Configuration Single
Свойство продукта Значение свойства
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.1W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.4m Ω @ 25A, 8V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 12.5V
Gate Charge (Qg) (Max) @ Vgs 19nC @ 4.5V
Rise Time 15ns
Drain to Source Voltage (Vdss) 25V
Vgs (Max) +10V, -8V
Fall Time (Typ) 17 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 1.1V
Gate to Source Voltage (Vgs) 10V
Pulsed Drain Current-Max (IDM) 200A
DS Breakdown Voltage-Min 25V
Nominal Vgs 1.1 V
Height 1.05mm
Length 5mm
Width 6mm
Thickness 1mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

CSD16321Q5C Документы

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