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CSD17313Q2Q1 Технические параметры

Texas Instruments  CSD17313Q2Q1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка Texas Instruments
Lifecycle Status NRND (Last Updated: 5 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Number of Pins 6Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 5A Tc
Drive Voltage (Max Rds On, Min Rds On) 3V 8V
Number of Elements 1 Element
Power Dissipation (Max) 2.3W Ta
Turn Off Delay Time 4.2 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q100, NexFET™
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Base Part Number CSD17313
Element Configuration Single
Свойство продукта Значение свойства
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.3W
Case Connection DRAIN
Turn On Delay Time 2.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30m Ω @ 4A, 8V
Vgs(th) (Max) @ Id 1.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 340pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 2.7nC @ 4.5V
Rise Time 3.9ns
Vgs (Max) +10V, -8V
Fall Time (Typ) 1.3 ns
Continuous Drain Current (ID) 5A
Threshold Voltage 1.3V
Gate to Source Voltage (Vgs) 10V
Drain Current-Max (Abs) (ID) 5A
Drain-source On Resistance-Max 0.042Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 57A
Length 2mm
Width 2mm
Thickness 750μm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

CSD17313Q2Q1 Документы

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