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CSD18504Q5A Технические параметры
Texas Instruments CSD18504Q5A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Texas Instruments | |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) | |
| Factory Lead Time | 8 Weeks | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerTDFN | |
| Number of Pins | 8Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 15A Ta 50A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 3.1W Ta 77W Tc | |
| Turn Off Delay Time | 12 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Cut Tape (CT) | |
| Series | NexFET™ | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 5Terminations | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
| Terminal Position | DUAL | |
| Peak Reflow Temperature (Cel) | 260 | |
| Base Part Number | CSD18504 | |
| Number of Channels | 1Channel | |
| Element Configuration | Single |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 3.1W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 3.2 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 6.6m Ω @ 17A, 10V | |
| Vgs(th) (Max) @ Id | 2.4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1656pF @ 20V | |
| Gate Charge (Qg) (Max) @ Vgs | 19nC @ 10V | |
| Rise Time | 6.8ns | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 2 ns | |
| Continuous Drain Current (ID) | 15A | |
| Threshold Voltage | 1.9V | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain Current-Max (Abs) (ID) | 50A | |
| Drain to Source Breakdown Voltage | 40V | |
| Pulsed Drain Current-Max (IDM) | 275A | |
| Avalanche Energy Rating (Eas) | 92 mJ | |
| Max Junction Temperature (Tj) | 150°C | |
| Feedback Cap-Max (Crss) | 9.6 pF | |
| Height | 1.1mm | |
| Length | 4.9mm | |
| Width | 6mm | |
| Thickness | 1mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant |
Индекс :
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