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CSD18531Q5A Технические параметры
Texas Instruments CSD18531Q5A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Texas Instruments | |
| Lifecycle Status | ACTIVE (Last Updated: 10 hours ago) | |
| Factory Lead Time | 16 Weeks | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerTDFN | |
| Number of Pins | 8Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 19A Ta 100A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 3.1W Ta 156W Tc | |
| Turn Off Delay Time | 20 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Cut Tape (CT) | |
| Series | NexFET™ | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 5Terminations | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
| Terminal Position | DUAL | |
| Peak Reflow Temperature (Cel) | 260 | |
| Base Part Number | CSD18531 | |
| Number of Channels | 1Channel |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 156W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 4.4 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 4.6m Ω @ 22A, 10V | |
| Vgs(th) (Max) @ Id | 2.3V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 3840pF @ 30V | |
| Gate Charge (Qg) (Max) @ Vgs | 43nC @ 10V | |
| Rise Time | 7.8ns | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 2.7 ns | |
| Continuous Drain Current (ID) | 100A | |
| Threshold Voltage | 1.8V | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | 60V | |
| Avalanche Energy Rating (Eas) | 224 mJ | |
| Max Junction Temperature (Tj) | 175°C | |
| Nominal Vgs | 1.8 V | |
| Height | 1.1mm | |
| Length | 4.9mm | |
| Width | 6mm | |
| Thickness | 1mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant |
Индекс :
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