Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
CSD18533Q5A Технические параметры
Texas Instruments CSD18533Q5A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Texas Instruments | |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) | |
| Factory Lead Time | 6 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerTDFN | |
| Number of Pins | 8Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 17A Ta 100A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 3.2W Ta 116W Tc | |
| Turn Off Delay Time | 15 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | NexFET™ | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 5Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
| Terminal Position | DUAL | |
| Peak Reflow Temperature (Cel) | 260 | |
| Base Part Number | CSD18533 | |
| Element Configuration | Single |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 3.2W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 5.2 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 5.9m Ω @ 18A, 10V | |
| Vgs(th) (Max) @ Id | 2.3V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 2750pF @ 30V | |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V | |
| Rise Time | 5.5ns | |
| Drain to Source Voltage (Vdss) | 60V | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 2 ns | |
| Continuous Drain Current (ID) | 100A | |
| Threshold Voltage | 1.9V | |
| Gate to Source Voltage (Vgs) | 20V | |
| DS Breakdown Voltage-Min | 60V | |
| Nominal Vgs | 1.9 V | |
| Feedback Cap-Max (Crss) | 9 pF | |
| Height | 1.1mm | |
| Length | 4.9mm | |
| Width | 6mm | |
| Thickness | 1mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Contains Lead |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ