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CSD19531Q5AT Технические параметры

Texas Instruments  CSD19531Q5AT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка Texas Instruments
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Factory Lead Time 8 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 100A Ta
Drive Voltage (Max Rds On, Min Rds On) 6V 10V
Number of Elements 1 Element
Power Dissipation (Max) 3.3W Ta 125W Tc
Turn Off Delay Time 18.4 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD19531
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.4m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 3.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3870pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Rise Time 5.8ns
Vgs (Max) ±20V
Fall Time (Typ) 5.2 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 2.7V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 337A
Height 1.1mm
Length 4.9mm
Width 6mm
Thickness 1mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

CSD19531Q5AT Документы

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