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CSD19536KTT Технические параметры
Texas Instruments CSD19536KTT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Texas Instruments | |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) | |
| Factory Lead Time | 6 Weeks | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 200A Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 375W Tc | |
| Turn Off Delay Time | 32 ns | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | NexFET™ | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | not_compliant | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Base Part Number | CSD19536 | |
| Number of Channels | 1Channel | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 375W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 13 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 2.4m Ω @ 100A, 10V | |
| Vgs(th) (Max) @ Id | 3.2V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 12000pF @ 50V | |
| Gate Charge (Qg) (Max) @ Vgs | 153nC @ 10V | |
| Rise Time | 8ns | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 6 ns | |
| Continuous Drain Current (ID) | 200A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain-source On Resistance-Max | 0.0028Ohm | |
| Drain to Source Breakdown Voltage | 100V | |
| Pulsed Drain Current-Max (IDM) | 400A | |
| Avalanche Energy Rating (Eas) | 806 mJ | |
| Max Junction Temperature (Tj) | 175°C | |
| Height | 4.83mm | |
| Length | 10.18mm | |
| Width | 8.41mm | |
| Thickness | 4.44mm | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Contains Lead |
Индекс :
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