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CSD19537Q3 Технические параметры
Texas Instruments CSD19537Q3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Texas Instruments | |
| Lifecycle Status | ACTIVE (Last Updated: 5 days ago) | |
| Factory Lead Time | 6 Weeks | |
| Contact Plating | Copper, Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerVDFN | |
| Number of Pins | 8Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 50A Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 2.8W Ta 83W Tc | |
| Turn Off Delay Time | 10 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | NexFET™ | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 5Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Additional Feature | AVALANCHE RATED | |
| Terminal Position | DUAL | |
| Terminal Form | NO LEAD | |
| Reach Compliance Code | not_compliant |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Base Part Number | CSD19537 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Number of Channels | 1Channel | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 2.8W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 5 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 14.5m Ω @ 10A, 10V | |
| Vgs(th) (Max) @ Id | 3.6V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1680pF @ 50V | |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V | |
| Rise Time | 3ns | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 3 ns | |
| Continuous Drain Current (ID) | 9.7A | |
| Threshold Voltage | 3V | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | 100V | |
| Avalanche Energy Rating (Eas) | 55 mJ | |
| Max Junction Temperature (Tj) | 150°C | |
| Height | 1.1mm | |
| Length | 3.3mm | |
| Width | 3.3mm | |
| Thickness | 1mm | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Contains Lead |
CSD19537Q3 Документы
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