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CSD25213W10 Технические параметры

Texas Instruments  CSD25213W10 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка Texas Instruments
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Factory Lead Time 20 Weeks
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-UFBGA, DSBGA
Number of Pins 4Pins
Current - Continuous Drain (Id) @ 25℃ 1.6A Ta
Drive Voltage (Max Rds On, Min Rds On) 2.5V 4.5V
Power Dissipation (Max) 1W Ta
Turn Off Delay Time 1 μs
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Position BOTTOM
Terminal Form BALL
Свойство продукта Значение свойства
Base Part Number CSD25213
Number of Channels 1Channel
Element Configuration Single
Operating Mode -0.85
Power Dissipation 1W
Turn On Delay Time 510 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 47m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 478pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 2.9nC @ 4.5V
Rise Time 520ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 970 ns
Continuous Drain Current (ID) -1.6A
Gate to Source Voltage (Vgs) -6V
Drain to Source Breakdown Voltage -20V
Max Junction Temperature (Tj) 150°C
Height 625μm
Length 0m
Width 0m
Thickness 650μm
RoHS Status ROHS3 Compliant
Lead Free Lead Free

CSD25213W10 Документы

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