Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
CSD25402Q3A Технические параметры
Texas Instruments CSD25402Q3A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Texas Instruments | |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) | |
| Factory Lead Time | 8 Weeks | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerVDFN | |
| Number of Pins | 8Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 76A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V 4.5V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 2.8W Ta 69W Tc | |
| Turn Off Delay Time | 25 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | NexFET™ | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 5Terminations | |
| ECCN Code | EAR99 | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | CSD25402 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Number of Channels | 1Channel | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 2.8W | |
| Case Connection | SOURCE | |
| Turn On Delay Time | 10 ns | |
| FET Type | P-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 8.9m Ω @ 10A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.15V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1790pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 9.7nC @ 4.5V | |
| Rise Time | 7ns | |
| Drain to Source Voltage (Vdss) | 20V | |
| Vgs (Max) | ±12V | |
| Fall Time (Typ) | 12 ns | |
| Continuous Drain Current (ID) | -76A | |
| Threshold Voltage | -900mV | |
| Gate to Source Voltage (Vgs) | 12V | |
| Drain Current-Max (Abs) (ID) | 35A | |
| Drain to Source Breakdown Voltage | -20V | |
| Max Junction Temperature (Tj) | 150°C | |
| Height | 900μm | |
| Length | 3.3mm | |
| Width | 3.3mm | |
| Thickness | 800μm | |
| REACH SVHC | No SVHC | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
CSD25402Q3A Документы
- PCN PackagingECAT Label Update 02/Oct/2014
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ