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CSD25481F4T Технические параметры

Texas Instruments  CSD25481F4T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка Texas Instruments
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 6 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 2.5A Ta
Drive Voltage (Max Rds On, Min Rds On) 1.8V 4.5V
Number of Elements 1 Element
Power Dissipation (Max) 500mW Ta
Turn Off Delay Time 16.9 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series FemtoFET™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Base Part Number CSD25481
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 500mW
Turn On Delay Time 4.1 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 88m Ω @ 500mA, 8V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 189pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 0.91nC @ 4.5V
Rise Time 3.6ns
Drain to Source Voltage (Vdss) 20V
Vgs (Max) -12V
Fall Time (Typ) 6.7 ns
Continuous Drain Current (ID) 2.5A
Threshold Voltage -950mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
Height 350μm
Length 1.035mm
Width 635μm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

CSD25481F4T Документы

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