Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
CSD75208W1015 Технические параметры
Texas Instruments CSD75208W1015 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | Texas Instruments | |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) | |
| Factory Lead Time | 6 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-UFBGA, DSBGA | |
| Number of Pins | 6Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 1.6A | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 29 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | NexFET™ | |
| JESD-609 Code | e1 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Max Power Dissipation | 750mW | |
| Terminal Position | BOTTOM | |
| Terminal Form | BALL | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Base Part Number | CSD75208 | |
| Number of Channels | 2Channels | |
| Operating Mode | ENHANCEMENT MODE | |
| Turn On Delay Time | 9 ns | |
| FET Type | 2 P-Channel (Dual) Common Source | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 68m Ω @ 1A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.1V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 410pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 2.5nC @ 4.5V | |
| Rise Time | 5ns | |
| Drain to Source Voltage (Vdss) | 20V | |
| Fall Time (Typ) | 11 ns | |
| Continuous Drain Current (ID) | -1.6A | |
| Threshold Voltage | -800mV | |
| Gate to Source Voltage (Vgs) | -6V | |
| Drain-source On Resistance-Max | 0.15Ohm | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| Feedback Cap-Max (Crss) | 10 pF | |
| Height | 1mm | |
| Length | 1.5mm | |
| Width | 1.8mm | |
| Thickness | 2mm | |
| REACH SVHC | No SVHC | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ