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CSD83325LT Технические параметры
Texas Instruments CSD83325LT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | Texas Instruments | |
| Lifecycle Status | ACTIVE (Last Updated: 5 days ago) | |
| Factory Lead Time | 6 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-XFBGA | |
| Number of Pins | 6Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 711 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | NexFET™ | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| Max Power Dissipation | 2.3W | |
| Terminal Position | BOTTOM | |
| Terminal Form | NO LEAD | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | CSD83325 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Element Configuration | Dual | |
| Operating Mode | ENHANCEMENT MODE | |
| Turn On Delay Time | 205 ns | |
| FET Type | 2 N-Channel (Dual) Common Drain | |
| Transistor Application | SWITCHING | |
| Vgs(th) (Max) @ Id | 1.25V @ 250μA | |
| Gate Charge (Qg) (Max) @ Vgs | 10.9nC @ 4.5V | |
| Rise Time | 353ns | |
| Drain to Source Voltage (Vdss) | 12V | |
| Fall Time (Typ) | 589 ns | |
| Continuous Drain Current (ID) | 8A | |
| Threshold Voltage | 950mV | |
| Gate to Source Voltage (Vgs) | 10V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Standard | |
| Drain to Source Resistance | 9.9mOhm | |
| Feedback Cap-Max (Crss) | 144 pF | |
| Length | 1.11mm | |
| Width | 2.16mm | |
| Thickness | 200μm | |
| REACH SVHC | No SVHC | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
CSD83325LT Документы
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