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CSD86311W1723 Технические параметры
Texas Instruments CSD86311W1723 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | Texas Instruments | |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) | |
| Factory Lead Time | 6 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 12-UFBGA, DSBGA | |
| Number of Pins | 12Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 13.2 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | NexFET™ | |
| JESD-609 Code | e1 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 12Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| HTS Code | 8541.29.00.95 | |
| Max Power Dissipation | 1.5W | |
| Terminal Position | BOTTOM | |
| Terminal Form | BALL | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | CSD86311 | |
| Pin Count | 12 | |
| Qualification Status | Not Qualified |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Element Configuration | Dual | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 1.5W | |
| Turn On Delay Time | 5.4 ns | |
| FET Type | 2 N-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 39m Ω @ 2A, 8V | |
| Vgs(th) (Max) @ Id | 1.4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 585pF @ 12.5V | |
| Gate Charge (Qg) (Max) @ Vgs | 4nC @ 4.5V | |
| Rise Time | 4.3ns | |
| Drain to Source Voltage (Vdss) | 25V | |
| Fall Time (Typ) | 2.9 ns | |
| Continuous Drain Current (ID) | 4.5A | |
| Threshold Voltage | 1V | |
| Gate to Source Voltage (Vgs) | 10V | |
| Drain-source On Resistance-Max | 0.051Ohm | |
| Drain to Source Breakdown Voltage | 25V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| Nominal Vgs | 1 V | |
| Feedback Cap-Max (Crss) | 13 pF | |
| Height | 625μm | |
| Length | 0m | |
| Width | 0m | |
| Thickness | 375μm | |
| REACH SVHC | No SVHC | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Contains Lead |
Индекс :
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