Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
CSD87312Q3E Технические параметры
Texas Instruments CSD87312Q3E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | Texas Instruments | |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) | |
| Factory Lead Time | 6 Weeks | |
| Contact Plating | Gold | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerTDFN | |
| Number of Pins | 8Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 17 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Cut Tape (CT) | |
| Series | NexFET™ | |
| JESD-609 Code | e4 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 7Terminations | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED, ULTRA-LOW RESISTANCE | |
| Max Power Dissipation | 2.5W | |
| Terminal Form | NO LEAD | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | not_compliant | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Base Part Number | CSD87312 | |
| Element Configuration | Dual | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 2.5W | |
| Turn On Delay Time | 7.8 ns | |
| FET Type | 2 N-Channel (Dual) Common Source | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 33m Ω @ 7A , 8V | |
| Vgs(th) (Max) @ Id | 1.3V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1250pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 8.2nC @ 4.5V | |
| Rise Time | 16ns | |
| Drain to Source Voltage (Vdss) | 30V | |
| Fall Time (Typ) | 2.8 ns | |
| Continuous Drain Current (ID) | 27A | |
| Gate to Source Voltage (Vgs) | 10V | |
| Drain to Source Breakdown Voltage | 30V | |
| Pulsed Drain Current-Max (IDM) | 45A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| Feedback Cap-Max (Crss) | 16 pF | |
| Length | 3.3mm | |
| Width | 3.3mm | |
| Thickness | 900μm | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Contains Lead |
CSD87312Q3E Документы
- PCN Design/SpecificationQFN 12mm Tape Width 18/Oct/2013
- PCN PackagingPin One 07/May/2018 Retraction of Parts 27/Aug/2018
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ