Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
CSD87503Q3E Технические параметры
Texas Instruments CSD87503Q3E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | Texas Instruments | |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) | |
| Factory Lead Time | 6 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerVDFN | |
| Surface Mount | YES | |
| Number of Pins | 8Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 10A Ta | |
| Number of Elements | 2 Elements | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | NexFET™ | |
| JESD-609 Code | e4 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) | |
| Terminal Form | NO LEAD | |
| Peak Reflow Temperature (Cel) | 260 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | CSD87503 | |
| Configuration | COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Power - Max | 15.6W | |
| FET Type | 2 N-Channel (Dual) Common Source | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 13.5m Ω @ 6A, 10V | |
| Vgs(th) (Max) @ Id | 2.1V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1020pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 17.4nC @ 4.5V | |
| Drain to Source Voltage (Vdss) | 30V | |
| Drain Current-Max (Abs) (ID) | 10A | |
| DS Breakdown Voltage-Min | 30V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Standard | |
| Feedback Cap-Max (Crss) | 194 pF | |
| Length | 3.3mm | |
| Width | 3.3mm | |
| Thickness | 1mm | |
| RoHS Status | ROHS3 Compliant |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ