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CSD88537NDT Технические параметры
Texas Instruments CSD88537NDT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | Texas Instruments | |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) | |
| Factory Lead Time | 6 Weeks | |
| Contact Plating | Gold | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
| Number of Pins | 8Pins | |
| Weight | 540.001716mg | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 15A | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 5 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | NexFET™ | |
| JESD-609 Code | e4 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 8Terminations | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Max Power Dissipation | 2.1W | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | CSD88537 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Number of Channels | 2Channels | |
| Element Configuration | Dual | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 2.1W | |
| Turn On Delay Time | 6 ns | |
| FET Type | 2 N-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 15m Ω @ 8A, 10V | |
| Vgs(th) (Max) @ Id | 3.6V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 30V | |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V | |
| Rise Time | 15ns | |
| Fall Time (Typ) | 19 ns | |
| Continuous Drain Current (ID) | 8A | |
| Threshold Voltage | 3V | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain Current-Max (Abs) (ID) | 8A | |
| Drain-source On Resistance-Max | 0.019Ohm | |
| Drain to Source Breakdown Voltage | 60V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Max Junction Temperature (Tj) | 150°C | |
| FET Feature | Standard | |
| Height | 1.75mm | |
| Length | 4.9mm | |
| Width | 3.91mm | |
| Thickness | 1.58mm | |
| REACH SVHC | No SVHC | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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