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CSD88599Q5DC Технические параметры
Texas Instruments CSD88599Q5DC technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | Texas Instruments | |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) | |
| Factory Lead Time | 8 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | 22-PowerTFDFN | |
| Surface Mount | YES | |
| Number of Pins | 22Pins | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | NexFET™ | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 22Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Position | DUAL | |
| Terminal Form | NO LEAD | |
| Peak Reflow Temperature (Cel) | 260 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Number of Functions | 1Function | |
| Reach Compliance Code | not_compliant | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | CSD88599 | |
| Supply Voltage-Max (Vsup) | 54V | |
| Power - Max | 12W | |
| FET Type | 2 N-Channel (Half Bridge) | |
| Rds On (Max) @ Id, Vgs | 2.1m Ω @ 30A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 4840pF @ 30V | |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 4.5V | |
| Drain to Source Voltage (Vdss) | 60V | |
| Interface IC Type | HALF BRIDGE BASED PERIPHERAL DRIVER | |
| FET Feature | Standard | |
| Output Current Flow Direction | SOURCE SINK | |
| Supply Voltage1-Min | 4.5V | |
| Supply Voltage1-Max | 16V | |
| Length | 6mm | |
| Width | 5mm | |
| Thickness | 850μm | |
| RoHS Status | ROHS3 Compliant |
Индекс :
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