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XP231N0201TR-G Технические параметры
Torex Semiconductor Ltd XP231N0201TR-G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Supplier Device Package | SOT-23 (TO-236) | |
| Mfr | Torex Semiconductor Ltd | |
| Product Status | Active | |
| Current - Continuous Drain (Id) @ 25℃ | 200mA (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Power Dissipation (Max) | 400mW (Ta) | |
| Base Product Number | XP231 | |
| MSL | MSL 1 - Unlimited | |
| Qualification | - | |
| Continuous Drain Current Id | 200mA | |
| Vds - Drain-Source Breakdown Voltage | 30 V | |
| Typical Turn-On Delay Time | 7 ns | |
| Vgs th - Gate-Source Threshold Voltage | 800 mV | |
| Pd - Power Dissipation | 400 mW | |
| Transistor Polarity | N-Channel | |
| Maximum Operating Temperature | + 150 C | |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | |
| Unit Weight | 0.000282 oz | |
| Minimum Operating Temperature | - 55 C | |
| Factory Pack QuantityFactory Pack Quantity | 3000 | |
| Mounting Styles | SMD/SMT | |
| Channel Mode | Enhancement | |
| Manufacturer | Torex Semiconductor |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Brand | Torex Semiconductor | |
| Qg - Gate Charge | 180 pC | |
| Rds On - Drain-Source Resistance | 5 Ohms | |
| RoHS | Details | |
| Typical Turn-Off Delay Time | 20 ns | |
| Id - Continuous Drain Current | 200 mA | |
| Series | - | |
| Operating Temperature | 150°C (TJ) | |
| Packaging | MouseReel | |
| Subcategory | MOSFETs | |
| Configuration | Single | |
| Number of Channels | 1 ChannelChannel | |
| Power Dissipation | 400mW | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 10mA, 4.5V | |
| Vgs(th) (Max) @ Id | 1.8V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 6.5 pF @ 10 V | |
| Gate Charge (Qg) (Max) @ Vgs | 0.18 nC @ 10 V | |
| Rise Time | 5 ns | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Vgs (Max) | ±20V | |
| Product Type | MOSFET | |
| Transistor Type | 1 N-Channel | |
| Channel Type | N Channel | |
| FET Feature | - | |
| Product Category | MOSFET |
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