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1SS181,LF(B Технические параметры
Toshiba 1SS181,LF(B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - RF | |
| Марка | Toshiba | |
| Material | Si | |
| ECCN (US) | EAR99 | |
| Maximum DC Reverse Voltage (V) | 80 | |
| Peak Reverse Repetitive Voltage (V) | 85 | |
| Maximum Continuous Forward Current (A) | 0.1 | |
| Peak Non-Repetitive Surge Current (A) | 2 | |
| Peak Forward Voltage (V) | 1.2 | |
| Peak Reverse Current (uA) | 0.5 | |
| Maximum Diode Capacitance (pF) | 4 | |
| Maximum Power Dissipation (mW) | 150 | |
| Peak Reverse Recovery Time (ns) | 4 | |
| Minimum Operating Temperature (°C) | -55 | |
| Maximum Operating Temperature (°C) | 125 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Supplier Temperature Grade | Automotive | |
| AEC Qualified Number | AEC-Q101 | |
| Supplier Package | S-Mini | |
| Military | No | |
| Mounting | Surface Mount | |
| Package Height | 1.1 | |
| Package Length | 2.9 | |
| Package Width | 1.5 | |
| PCB changed | 3 | |
| Part Status | Active | |
| Type | Switching Diode | |
| Pin Count | 3 | |
| Configuration | Dual Common Anode | |
| RoHS Status | RoHS Compliant |
1SS181,LF(B Документы
- datasheetstoshiba-1ss181te85lf-datasheets-0739.pdf
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