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1SS272(TE85R,F) Технические параметры

Toshiba  1SS272(TE85R,F) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка Toshiba
Surface Mount YES
Diode Element Material SILICON
Number of Terminals 4Terminals
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 80
Peak Reverse Repetitive Voltage (V) 85
Maximum Continuous Forward Current (A) 0.1
Peak Non-Repetitive Surge Current (A) 2
Peak Forward Voltage (V) 1.2
Peak Reverse Current (uA) 0.5
Maximum Power Dissipation (mW) 150
Peak Reverse Recovery Time (ns) 4
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 125
Supplier Package SMQ
Military No
Mounting Surface Mount
Package Height 1.1
Package Length 2.9
Package Width 1.5
PCB changed 4
Package Description SC-61, 4 PIN
Package Style SMALL OUTLINE
Package Body Material PLASTIC/EPOXY
Operating Temperature-Max 125 °C
Rohs Code Yes
Свойство продукта Значение свойства
Manufacturer Part Number 1SS272(TE85R,F)
Power Dissipation (Max) 0.225 W
Package Shape RECTANGULAR
Manufacturer Toshiba America Electronic Components
Number of Elements 2 Elements
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Forward Voltage-Max (VF) 1.2 V
Risk Rank 5.7
Packaging Tape and Reel
Part Status Active
Type Switching Diode
Terminal Position DUAL
Terminal Form GULL WING
Reach Compliance Code unknown
Pin Count 4
JESD-30 Code R-PDSO-G4
Configuration Dual Parallel
Diode Type RECTIFIER DIODE
Output Current-Max 0.1 A
Number of Phases 1Phase
Rep Pk Reverse Voltage-Max 85 V
Non-rep Pk Forward Current-Max 2 A
Reverse Current-Max 0.5 µA
Reverse Recovery Time-Max 0.004 µs
Reverse Test Voltage 80 V
RoHS Status RoHS Compliant

1SS272(TE85R,F) Документы

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