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1SS301(TE85L,F) Технические параметры

Toshiba  1SS301(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка Toshiba
Surface Mount YES
Material Si
ECCN (US) EAR99
HTS 8541.10.00.70
Maximum DC Reverse Voltage (V) 80
Peak Reverse Repetitive Voltage (V) 85
Maximum Continuous Forward Current (A) 0.1
Peak Non-Repetitive Surge Current (A) 2
Peak Forward Voltage (V) 1.2
Peak Reverse Current (uA) 0.5
Maximum Diode Capacitance (pF) 3
Maximum Power Dissipation (mW) 100
Peak Reverse Recovery Time (ns) 4
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 125
Supplier Temperature Grade Automotive
Automotive Yes
AEC Qualified Number AEC-Q101
Supplier Package USM
Military No
Mounting Surface Mount
Package Height 0.9
Package Length 2
Свойство продукта Значение свойства
Package Width 1.25
PCB changed 3
Operating Temperature-Max 125 °C
Rohs Code Yes
Manufacturer Part Number 1SS301(TE85L,F)
Manufacturer Toshiba America Electronic Components
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Forward Voltage-Max (VF) 1.2 V
Risk Rank 1.71
Packaging Tape and Reel
Part Status Active
ECCN Code EAR99
Type Switching Diode
HTS Code 8541.10.00.70
Subcategory Rectifier Diodes
Reach Compliance Code unknown
Pin Count 3
Configuration Dual Common Cathode
Diode Type RECTIFIER DIODE
Output Current-Max 0.1 A
Rep Pk Reverse Voltage-Max 85 V
Non-rep Pk Forward Current-Max 2 A
Reverse Recovery Time-Max 0.004 µs
RoHS Status RoHS Compliant

1SS301(TE85L,F) Документы

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