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1SS367,H3F(T Технические параметры

Toshiba  1SS367,H3F(T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка Toshiba
Material Si
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 10
Peak Reverse Repetitive Voltage (V) 15
Maximum Continuous Forward Current (A) 0.1
Peak Non-Repetitive Surge Current (A) 1
Peak Forward Voltage (V) [email protected]
Peak Reverse Current (uA) 20
Maximum Diode Capacitance (pF) 40
Maximum Power Dissipation (mW) 200
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 100
Supplier Temperature Grade Automotive
AEC Qualified No
Standard Package Name USC
Supplier Package USC
Military No
Mounting Surface Mount
Package Height 0.9
Package Length 1.7
Package Width 1.25
PCB changed 2
Lead Shape Gull-wing
Peak Rep Rev Volt 15(V)
Peak Forward Voltage 0.5(V)
Operating Temperature Classification INDUSTRIALC
Package Type USC
Product Depth (mm) 1.25(mm)
Свойство продукта Значение свойства
Maximum Forward Current 100(mA)
Rev Curr 20(uA)
Operating Temp Range -40C to 100C
Power Dissipation (Max) 200(mW)
Rad Hardened No
Qualification -
Manufacturer Part Number 1SS367,H3F(T
Manufacturer Toshiba America Electronic Components
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Risk Rank 1.55
Packaging Tape and Reel
Part Status Active
ECCN Code EAR99
Type Small Signal Schottky Diode
Reach Compliance Code unknown
Pin Count 2
Configuration Single
Diode Type RECTIFIER DIODE
Forward Current 100(mA)
Forward Voltage 0.5(V)
Reverse Recovery Time -
Peak Reverse Current 20(uA)
Peak Non-Repetitive Surge Current 1(A)
Diode Configuration Single
Repetitive Peak Reverse Voltage 15V
Product Length (mm) 1.7(mm)
Product Height (mm) 0.9(mm)
RoHS Status RoHS Compliant

1SS367,H3F(T Документы

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