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1SS387(TPL3,F) Технические параметры

Toshiba  1SS387(TPL3,F) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка Toshiba
Surface Mount YES
Material Si
Diode Element Material SILICON
Number of Terminals 2Terminals
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 80
Peak Reverse Repetitive Voltage (V) 85
Maximum Continuous Forward Current (A) 0.1
Peak Non-Repetitive Surge Current (A) 1
Peak Forward Voltage (V) 1.2
Peak Reverse Current (uA) 0.5
Maximum Diode Capacitance (pF) 3
Maximum Power Dissipation (mW) 150
Peak Reverse Recovery Time (ns) 4
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 125
Supplier Temperature Grade Automotive
Automotive No
Supplier Package ESC
Military No
Mounting Surface Mount
Package Height 0.6
Package Length 1.2
Package Width 0.8
PCB changed 2
Package Style SMALL OUTLINE
Package Body Material PLASTIC/EPOXY
Operating Temperature-Max 125 °C
Свойство продукта Значение свойства
Rohs Code Yes
Manufacturer Part Number 1SS387(TPL3,F)
Power Dissipation (Max) 0.15 W
Package Shape RECTANGULAR
Manufacturer Toshiba America Electronic Components
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Forward Voltage-Max (VF) 1.2 V
Risk Rank 2.21
Packaging Tape and Reel
Part Status Active
Type Switching Diode
Applications ULTRA FAST RECOVERY
Subcategory Rectifier Diodes
Terminal Position DUAL
Terminal Form FLAT
Reach Compliance Code unknown
Pin Count 2
JESD-30 Code R-PDSO-F2
Configuration Single
Diode Type RECTIFIER DIODE
Output Current-Max 0.1 A
Number of Phases 1Phase
Rep Pk Reverse Voltage-Max 85 V
Non-rep Pk Forward Current-Max 1 A
Reverse Current-Max 0.5 µA
Reverse Recovery Time-Max 0.004 µs
Reverse Test Voltage 80 V
RoHS Status RoHS Compliant
Просмотр сходства

1SS387(TPL3,F) Документы

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