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1SS392,LF(T Технические параметры

Toshiba  1SS392,LF(T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка Toshiba
Material Si
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 40
Peak Reverse Repetitive Voltage (V) 45
Maximum Continuous Forward Current (A) 0.1
Peak Non-Repetitive Surge Current (A) 1
Peak Forward Voltage (V) 0.6
Peak Reverse Current (uA) 5@40V
Maximum Diode Capacitance (pF) 25
Maximum Power Dissipation (mW) 150
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 100
Свойство продукта Значение свойства
Supplier Package S-Mini
Military No
Mounting Surface Mount
Package Height 1.1
Package Length 2.9
Package Width 1.5
PCB changed 3
Lead Shape Gull-wing
Packaging Tape and Reel
Part Status Active
Type Small Signal Schottky Diode
Pin Count 3
Configuration Dual Common Cathode
RoHS Status RoHS Compliant
Просмотр сходства

1SS392,LF(T Документы

1SS392,LF(T brand manufacturers: Toshiba, Anli stock, 1SS392,LF(T reference price.Toshiba. 1SS392,LF(T parameters, 1SS392,LF(T Datasheet PDF and pin diagram description download.You can use the 1SS392,LF(T Diodes - RF, DSP Datesheet PDF, find 1SS392,LF(T pin diagram and circuit diagram and usage method of function,1SS392,LF(T electronics tutorials.You can download from the Anli.