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1SS396,LF(B Технические параметры
Toshiba 1SS396,LF(B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - RF | |
| Марка | Toshiba | |
| ECCN (US) | EAR99 | |
| Maximum DC Reverse Voltage (V) | 40 | |
| Peak Reverse Repetitive Voltage (V) | 45 | |
| Maximum Continuous Forward Current (A) | 0.1 | |
| Peak Non-Repetitive Surge Current (A) | 1 | |
| Peak Forward Voltage (V) | 0.6 | |
| Peak Reverse Current (uA) | 5@40V | |
| Maximum Diode Capacitance (pF) | 25 | |
| Maximum Power Dissipation (mW) | 150 | |
| Minimum Operating Temperature (°C) | -40 | |
| Maximum Operating Temperature (°C) | 100 | |
| Supplier Package | S-Mini |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Military | No | |
| Mounting | Surface Mount | |
| Package Height | 1.1 | |
| Package Length | 2.9 | |
| Package Width | 1.5 | |
| PCB changed | 3 | |
| Lead Shape | Gull-wing | |
| Packaging | Tape and Reel | |
| Part Status | Active | |
| Type | Small Signal Schottky Diode | |
| Pin Count | 3 | |
| Configuration | Dual Series | |
| RoHS Status | RoHS Compliant |
1SS396,LF(B Документы
- datasheetstoshiba-1ss396te85lf-datasheets-5277.pdf
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