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1SS396,LF(T Технические параметры

Toshiba  1SS396,LF(T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка Toshiba
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 40
Peak Reverse Repetitive Voltage (V) 45
Maximum Continuous Forward Current (A) 0.1
Peak Non-Repetitive Surge Current (A) 1
Peak Forward Voltage (V) 0.6
Peak Reverse Current (uA) 5@40V
Maximum Diode Capacitance (pF) 25
Maximum Power Dissipation (mW) 150
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 100
AEC Qualified No
Standard Package Name S-MINI
Supplier Package S-Mini
Military No
Mounting Surface Mount
Package Height 1.1
Package Length 2.9
Package Width 1.5
PCB changed 3
Свойство продукта Значение свойства
Lead Shape Gull-wing
Peak Rep Rev Volt 45(V)
Peak Forward Voltage 0.6(V)
Operating Temperature Classification Industrial
Package Type SMini
Product Depth (mm) 1.5(mm)
Maximum Forward Current 100(mA)
Rev Curr 5(uA)
Operating Temp Range -40C to 100C
Power Dissipation (Max) 150(mW)
Rad Hardened No
Packaging Tape and Reel
Part Status Active
Type Small Signal Schottky Diode
Pin Count 3
Configuration Dual Series
Forward Current 100(mA)
Forward Voltage 0.6(V)
Peak Reverse Current 5(uA)
Peak Non-Repetitive Surge Current 1(A)
Product Height (mm) 1.1(mm)
RoHS Status RoHS Compliant

1SS396,LF(T Документы

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