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1SS416(TL4,D) Технические параметры

Toshiba  1SS416(TL4,D) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка Toshiba
Factory Lead Time 16 Weeks
Material Si
ECCN (US) EAR99
HTS 8541.10.00.70
Maximum DC Reverse Voltage (V) 30
Peak Reverse Repetitive Voltage (V) 35
Maximum Continuous Forward Current (A) 0.1
Peak Non-Repetitive Surge Current (A) 1
Peak Forward Voltage (V) 0.5
Peak Reverse Current (uA) 50
Maximum Diode Capacitance (pF) 15(Typ)
Maximum Power Dissipation (mW) 100
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 100
Supplier Package fSC
Military No
Свойство продукта Значение свойства
Mounting Surface Mount
Package Height 0.48
Package Length 0.8
Package Width 0.6
PCB changed 2
Lead Shape Flat
Manufacturer Part Number 1SS416(TL4,D)
Manufacturer Toshiba America Electronic Components
Part Life Cycle Code Contact Manufacturer
Ihs Manufacturer TOSHIBA CORP
Risk Rank 4.62
Part Status Obsolete
Type Small Signal Schottky Diode
Reach Compliance Code unknown
Pin Count 2
Configuration Single
Repetitive Peak Reverse Voltage 35
RoHS Status RoHS Compliant

1SS416(TL4,D) Документы

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